Objectives

  • Simulate the architecture, technology processing, operation modes and performance of FB-DRAMs at different level of integration: memory cells, and memory matrix. Detailed and microscopic comprehension of the physical mechanisms involved.
  • Provide accurate TCAD numerical transient simulations of the physics mechanisms related to the programming and retention stages of ultra-scaled FB-DRAM.
  • Adjust the parameters of the physics models (lifetime, impact ionization rate…) in TCAD simulators, based on the data extracted in WP1 and subsequently to the different fabrication runs.
  • Development of home-made Multi-Subband Ensemble Monte Carlo simulators (MS-EMC) to study the behaviour of FB-DRAM cells with different architectures and materials at variable temperature.
  • Calibration of TCAD (both home-made and commercial) simulators based on drift-diffusion (DD) approximation and quantum corrected DD approximation to simulate different FB-DRAM cells.
  • Simulation, optimization and benchmarking of the different FB-DRAM cells in DC conditions.
  • Simulation, optimization and benchmarking of the different FB-DRAM cells in transient conditions.
  • Selection of the appropriate FB-DRAM structures and parameters to be used as baselines for further consideration towards integration in a memory matrix, and a SoC demonstrator.
  • Statistical simulations of variability issues in FB-DRAM cells.
  • Evaluation of FB-DRAM parameters with respect to proposed DRAM memory block architecture and circuit topology modifications if necessary.
  • Technological simulation of the fabrication process of the different FB-DRAM cells.

Role of partners

  • GR: Optimization and benchmarking of FB-DRAM cells, extension of simulation tools (electron-hole MS-EMC, III-V materials, nanowires). Technological simulation of the fabrication process.
  • STM: Technological simulation of the fabrication process.
  • GU: Optimization and benchmarking of FB-DRAM cells, statistical study of different FB-DRAM cells.
  • CEA: Simulation of FB-DRAM devices targeting sub-14nm technology node.
  • INPG: Calibration of TCAD commercial tools to simulate and optimize different FB-DRAM cells.
  • IBM: Specification, optimization and benchmarking of III-V nanowire materials and device properties.
  • GSS, SureCore: Statistical study of different FB-DRAM cells.

Interaction with other WPs

  • Simulate devices fabricated in WP1, provide inputs for optimized devices.
  • Calibrate the numerical simulation from experimental data from WP2.
  • Provide insight to characterization of WP2.
  • Provide data for compact modeling of WP4.