Journal publications

Authors Title Reference & DOI Open Access
Carlos Navarro, Joris Lacord, Mukta, Singh Parihar, Fikru Adamu-Lema, Meng Duan, Noel Rodriguez, Binjie Cheng, Hassan El Dirani, Jean-Charles Barbe, Pascal Fonteneau, Maryline Bawedin, Campbell Millar, Philippe Galy, Cyrille Le Royer, Siegfried Karg, Paul Wells, Yong-Tae Kim, Asen Asenov, Sorin Cristoloveanu, and Francisco Gamiz Extended Analysis of the Z²-FET: Operation as Capacitorless eDRAM IEEE Transactions on Electron Devices – Accepted. DOI:10.1109/TED.2017.2751141 Link
Carlos Navarro, Meng Duan, Mukta Singh Parihar, Fikru Adamu-Lema, Stefan Coseman, Joris Lacord, Kyunghwa
Lee, Carlos Sampedro, Binjie Cheng, Hassan El Dirani, Jean-Charles Barbe, Pascal Fonteneau, Seong-Il Kim, Sorin Cristoloveanu, Maryline Bawedin, Campbell Millar, Philippe Galy, Cyrille Le Royer, Siegfried Karg, Heike Riel, Paul Wells, Yong-Tae Kim, Asen Asenov and Francisco Gamiz
Z²-FET as capacitor-less eDRAM cell for high density integration IEEE Transactions on Electron Devices – Accepted  Link
C. Medina-Bailón, JL. Padilla, Carlos Sampedro, Cem Alper, Francisco Gámiz and Adrian Mihai Ionescu Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs IEEE Transactions on Electron Devices, 64, 3084 (2017). DOI:10.1109/TED.2017.2715403  Link
J. Gooth, V. Schaller, S. Wirths, H. Schmid, M. Borg, N. Bologna, S. Karg, and H. Riel Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon Appl. Phys. Lett. 110, 083105 (2017). DOI:10.1063/1.4977031  –
 J. Gooth, M. Borg, H. Schmid, V. Schaller, S. Wirths, K. E. Moselund, M. Luisier, S. Karg, and H. Riel Ballistic one-dimensional InAs nanowire cross-junction interconnect Nano Lett., 17 (4), pp 2596– 2602 (2017). DOI: 10.1021/acs.nanolett.7b00400  –
H. El Dirani, K.H. Lee, M.S. Parihar, J. Lacord, S.Martinie, J-Ch.
Barbe, X.Mescot, P. Fonteneau, J.-E. Broquin, G. Ghibaudo, Ph. Galy, F. Gamiz, Y. Taur, Y.-T. Kim, S. Cristoloveanu, M. Bawedin
Ultra-low power 1T-DRAM in FDSOI technology Microelectronic Engineering, 178, 245 (2017). DOI:10.1016/j.mee.2017.05.047 Embargo
C. Medina-Bailon , C. Sampedro, F. Gámiz, A. Godoy, L. Donetti Confinement orientation effects in S/D tunneling Solid-State Electronics, 128, 48 (2017). DOI:10.1016/j.sse.2016.10.028 Embargo
 Hassan El Dirani, Pascal Fonteneau, Yohann Solaro, Charles-Alex Legrand, David Marin-Cudraz, Philippe Ferrari, Sorin Cristoloveanu Sharp-switching band-modulation back-gated devices in advanced FDSOI technology Solid-State Electronics, 128, 180 (2017). DOI:10.1016/j.sse.2016.10.008 Embargo
 Yuan Taur, Joris Lacord, Mukta Singh Parihar, Jing Wan, Sebastien Martinie, Kyunghwa Lee, Maryline Bawedin, Jean-Charles Barbe, Sorin Cristoloveanu A comprehensive model on field-effect pnpn devices (Z²-FET) Solid-State Electronics, 134, 1 (2017). DOI:10.1016/j.sse.2017.05.004 Embargo

Conference contributions

Conference Authors Title Place & Date
EUROSOI-ULIS 2016 Francisco Gamiz Capacitor-less memory: Advances and challenges Vienna (Austria), January 25–27, 2016
SISPAD 2016 C. Medina-Bailon, C. Sampedro, J.L. Padilla, F. Gamiz,
A. Godoy and L. Donetti
Multi-Subband Ensemble Monte Carlo Study of Band-to-Band Tunneling in Silicon-based TFETs Nuremberg (Germany), September 6–8, 2016
ESSDERC 2016 S. Karg, V. Schaller, A. Gaul, K. Moselund, H. Schmid, B. Gotsmann, J. Gooth, H. Riel Ballistic transport and high thermopower in one-dimensional InAs nanowire Lausanne (Switzerland), September 12–15, 2016
EUROSOI-ULIS 2017 M. Bawedin, H. EI Dirani, K. Lee, M.S. Parihar, J. Lacord, S. Martinie, C. Le Royer, J.-Ch. Barbe, X. Mescot, P. Fonteneau, Ph. Galy, F. Gamiz, C. Navarro, B. Cheng,
A. Asenov, Y. Taur, and S. Cristoloveanu
The mystery of the Z²-FET 1 T-DRAM memory Athens (Greece), 3–5 April (2017)
EUROSOI-ULIS 2017 C. Medina-Bailon, T. Sadi, C. Sampedro, J.L. Padilla, A. Godoy, L. Donetti, V. Georgiev, F. Gamiz and A. Asenov Assessment of Gate Leakage Mechanism utilizing Multi-Subband Ensemble Monte Carlo Athens (Greece), 3–5 April (2017)
EUROSOI-ULIS 2017 M.S. Parihar, K. H. Lee, M. Bawedin, J. Lacord, S. Martinie, J.-C. Barbé, Y. Taur and S. Cristoloveanu Impact of carrier lifetime on Z²-FET operation Athens (Greece),  April 3–5, 2017
EUROSOI-ULIS 2017  L. Donetti, C. Sampedro, F.G. Ruiz, A. Godoy, F. Gamiz Multi-Subband Ensemble Monte
Carlo simulations of scaled GAA MOSFETs
Athens (Greece),  3–5 April (2017)
IMW 2017 M.S. Parihar, K. H. Lee, H. E. Dirani, C. Navarro, J. Lacord, S. Martinie, J.-Ch. Barbe, P.
Fonteneau, Ph. Galy, C. Le Royer, X. Mescot, F. Gamiz, B. Cheng, A. Asenov, Y. Taur, M.
Bawedin and S. Cristoloveanu
Low-Power Z²-FET Capacitorless 1T-DRAM Monterey (USA), May 14–17, 2017
INFOS 2017 H. El Dirani, K. Lee, M.S. Parihar, J. Lacord, S. Martinie, J.-Ch. Barbe, X. Mescot, P. Fonteneau, Ph. Galy, F. Gamiz, Y. Taur, S. Cristoloveanu, M. Bawedin Ultra Low-Power 1T-DRAM in
FDSOI Technology
Potsdam (Germany), June 27–30, 2017
SISPAD 2017 F. Adamu-Lema, M. Duan, C. Navaro, V Georgiev, B. Cheng, X. Wang, C. Millar, F. Gamiz, A.Asenov Simulation Based DC and Dynamic Behaviour Characterization of Z2FET Kamakura (Japan) , September 7–9, 2017
SISPAD 2017 M. Duan, F. Adamu-Lema, B. Cheng, C. Navarro, X. Wang, V. P. Georgiev, F.
Gamiz, C. Millar, A. Asenov
2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application Kamakura (Japan) , September 7–9, 2017
SISPAD 2017 C. Medina-Bailon, C. Sampedro, J.L. Padilla,A. Godoy, L. Donetti, F. Gamiz, T. Sadi, V. Georgiev, A. Asenov Multi-Subband Ensemble Monte Carlo Study of Tunneling Leakage Mechanisms Kamakura (Japan) , September 7–9, 2017
SISPAD 2017 F. Tcheme Wakam, J. Lacord, S. Martinie, J.-Ch. Barbe, M. Bawedin, S. Cristoloveanu Optimization guidelines of A2RAM cell performance through TCAD simulations Kamakura (Japan) , September 7–9, 2017
SISPAD 2017 J. Lacord, S. Martinie, M.-S. Parihar, K. Lee, M. Bawedin, S. Cristoloveanu, Y. Taur and J.-Ch. Barbé Z²-FET DC hysteresis: deep understanding and preliminary model  Kamakura (Japan) , September 7–9, 2017
ESSDERC 2017 L. Donetti, C. Sampedro, F.G. Ruiz, A. Godoy, F. Gamiz Three-dimensional Multi-subband Simulation of Scaled FinFETs Leuven (Belgium), September 11–14, 2017
IEEE S3S 2017 C.Navarro, F.Gamiz, N.Rodriguez, L.Donetti, C.Sampedro, Seong Il Kim, Yong Tae Kim, S. Cristoloveanu Gate-induced vs. implanted body doping impact on Z²-FET DC operation San Francisco (USA), October 16–19, 2017
IEEE S3S 2017 S. Martinie, J. Lacord, O. Rozeau, M.-S. Parihar, Kyunghwa Lee, Maryline Bawedin, Sorin Cristoloveanu, Yuan Taur and J-C. Barbe Z²-FET SPICE Model: DC and Memory Operation San Francisco (USA), October 16–19, 2017