Journal publications

Authors Title Reference & DOI Open Access
 S. Cristoloveanu, J. Wan, and A. Zaslavsky  A Review of Sharp-Switching Devices for Ultra-Low Power Applications IEEE Journal of the Electron Devices Society, vol. 4, no. 5, pp. 215–226, Sep. 2016. DOI: 10.1109/JEDS.2016.2545978 Link
Carlos Navarro, Joris Lacord, Mukta, Singh Parihar, Fikru Adamu-Lema, Meng Duan, Noel Rodriguez, Binjie Cheng, Hassan El Dirani, Jean-Charles Barbe, Pascal Fonteneau, Maryline Bawedin, Campbell Millar, Philippe Galy, Cyrille Le Royer, Siegfried Karg, Paul Wells, Yong-Tae Kim, Asen Asenov, Sorin Cristoloveanu, and Francisco Gamiz Extended Analysis of the Z²-FET: Operation as Capacitorless eDRAM IEEE Transactions on Electron Devices, vol. 64, no. 11, pp. 4486–4491, Nov.
2017. DOI:10.1109/TED.2017.2751141
Link
Carlos Navarro, Meng Duan, Mukta Singh Parihar, Fikru Adamu-Lema, Stefan Coseman, Joris Lacord, Kyunghwa
Lee, Carlos Sampedro, Binjie Cheng, Hassan El Dirani, Jean-Charles Barbe, Pascal Fonteneau, Seong-Il Kim, Sorin Cristoloveanu, Maryline Bawedin, Campbell Millar, Philippe Galy, Cyrille Le Royer, Siegfried Karg, Heike Riel, Paul Wells, Yong-Tae Kim, Asen Asenov and Francisco Gamiz
Z²-FET as capacitor-less eDRAM cell for high density integration IEEE Transactions on Electron Devices, vol. 64, no. 12, pp. 4904–4909, Dec. 2017 DOI: 10.1109/TED.2017.2759308  Link
J. Gooth, V. Schaller, S. Wirths, H. Schmid, M. Borg, N. Bologna, S. Karg, and H. Riel Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon Appl. Phys. Lett. 110, 083105 (2017). DOI:10.1063/1.4977031  –
 J. Gooth, M. Borg, H. Schmid, V. Schaller, S. Wirths, K. E. Moselund, M. Luisier, S. Karg, and H. Riel Ballistic one-dimensional InAs nanowire cross-junction interconnect Nano Lett., 17 (4), pp 2596– 2602 (2017). DOI: 10.1021/acs.nanolett.7b00400  –
H. El Dirani, K.H. Lee, M.S. Parihar, J. Lacord, S.Martinie, J-Ch.
Barbe, X.Mescot, P. Fonteneau, J.-E. Broquin, G. Ghibaudo, Ph. Galy, F. Gamiz, Y. Taur, Y.-T. Kim, S. Cristoloveanu, M. Bawedin
Ultra-low power 1T-DRAM in FDSOI technology Microelectronic Engineering, 178, 245 (2017). DOI:10.1016/j.mee.2017.05.047 Link
C. Medina-Bailon , C. Sampedro, F. Gámiz, A. Godoy, L. Donetti Confinement orientation effects in S/D tunneling Solid-State Electronics, 128, 48 (2017). DOI:10.1016/j.sse.2016.10.028 Link
Yuan Taur, Joris Lacord, Mukta Singh Parihar, Jing Wan, Sebastien Martinie, Kyunghwa Lee, Maryline Bawedin, Jean-Charles Barbe, Sorin Cristoloveanu A comprehensive model on field-effect pnpn devices (Z²-FET) Solid-State Electronics, 134, 1 (2017). DOI:10.1016/j.sse.2017.05.004 Link
S. Cristoloveanu, K. H. Lee, and M. Bawedin A reconfigurable silicon-on-insulator diode with tunable electrostatic doping Journal of Applied Physics, vol. 122, no. 8, p. 084502, Aug. 2017. DOI: 10.1063/1.4999314 Link
K. Lee, M. Bawedin, M. Parihar, H.-J. Park, and S. Cristoloveanu The Virtual Diode with Electrostatic Doping ECS Trans., vol. 77, no. 5, pp. 191–196, 2017. DOI: 10.1149/07705.0191ecst Link
C. Marquez, N. Rodriguez, F. Gamiz, and A. Ohata Insights on the Body Charging and Noise Generation by Impact Ionization in Fully Depleted SOI MOSFETs IEEE Transactions on Electron Devices, vol. 64, no. 12, pp. 5093–5098, Dec. 2017. DOI: 10.1109/TED.2017.2762733 Link
C. Medina-Bailón, J. L. Padilla, C. Sampedro, C. Alper, F. Gámiz, and A. M. Ionescu Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs IEEE Transactions on Electron Devices, vol. 64, no. 8, pp. 3084–3091, Aug. 2017. DOI: 10.1109/TED.2017.2715403 Link
S. Cristoloveanu, K.H Lee, M. S. Parihar, H. El Dirani, J, Lacord, S. Martinie, C Le Royer, J.-Ch. Barbe, X. Mescot, P. Fontenau, Ph. Galy, F. Gamiz, C. Navarro, B. Cheng, M. Duan, F. Adamu-Lema, A. Asenov, Y. Taur, Y. Xu, Y.-T. Kim, J. Wan, M. Bawedin A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters Solid-State Electronics, vol. 143, pp. 10–19, May 2018. DOI: 10.1016/j.sse.2017.11.012 Link
L. Donetti, C. Sampedro, F. G. Ruiz, A. Godoy, and F. Gamiz Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs Solid-State Electronics, vol. 143, pp. 49–55, May 2018. DOI: 10.1016/j.sse.2018.02.004 Link
O. Huerta, C. Marquez, A. I. Tec-Chim, F. Guarin, E. A. Gutierrez-D., and F. Gamiz Experimental Characterization of the Random Telegraph Noise Signature in MOSFETs Under the Influence of Magnetic Fields IEEE Electron Device Letters, vol. 39, no. 7, pp. 1054–1057, Jul. 2018. DOI: 10.1109/LED.2018.2835142 Link
C. Medina-Bailon, J. L. Padilla, C. Sampedro, A. Godoy, L. Donetti, and F. Gámiz Source-to-Drain Tunneling Analysis in FDSOI, DGSOI, and FinFET Devices by Means of Multisubband Ensemble Monte Carlo IEEE Transactions on Electron Devices, vol. 65, no. 11, pp. 4740–4746, Nov. 2018. DOI: 10.1109/TED.2018.2867721 Link
C. Navarro, S. Navarro, C. Marquez, L. Donetti, C. Sampedro, K. Sigfried, H. Riel, F. Gamiz InGaAs Capacitor-Less DRAM Cells TCAD Demonstration IEEE Journal of the Electron Devices Society, vol. 6, pp. 884–892, 2018. DOI: 10.1109/JEDS.2018.2859233 Link
C. Navarro, S. Navarro, C. Marquez, C. Sampedro, L. Donetti, K. Sigfried, H. Riel, F. Gamiz  Towards InGaAs MSDRAM Capacitor-Less Cells ECS Trans., vol. 85, no. 8, pp. 195–200, Apr. 2018. DOI: 10.1149/08508.0195ecst Link
S. Navarro, C. Navarro, C. Marquez, H. El Dirani, Ph. Galy, M. Bawedine, A. Pickering, S. Cristoloveanu, F. Gamiz Experimental Demonstration of Operational Z2-FET Memory Matrix IEEE Electron Device Letters, vol. 39, no. 5, pp. 660–663, May 2018. DOI: 10.1109/LED.2018.2819801 Link
J. L. Padilla, C. Medina-Bailón, C. Márquez, C. Sampedro, L. Donetti, F. Gámiz, A. M. Ionescu Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron–Hole Bilayer Tunneling Field-Effect Transistor IEEE Transactions on Electron Devices, vol. 65, no. 10, pp. 4679–4686, Oct. 2018. DOI: 10.1109/TED.2018.2866123 Link
Mukta Singh Parihar, Kyung Hwa Lee, Hyung Jin Park, Joris Lacord, Sébastien Martinie, Jean-Charles Barbé, Yue Xu, Hassan El Dirani, Yuan Taur, Sorin Cristoloveanu, Maryline Bawedin Insight into carrier lifetime impact on band-modulation devices Solid-State Electronics, vol. 143, pp. 41–48, May 2018. DOI: 10.1016/j.sse.2017.12.007 Link
H. J. Park, M. Bawedin, H. G. Choi, and S. Cristoloveanu Kink effect in ultrathin FDSOI MOSFETs Solid-State Electronics, vol. 143, pp. 33–40, May 2018. DOI: 10.1016/j.sse.2017.12.002 Link
S. Cristoloveanu, K. H. Lee, H. Park, and M. S. Parihar The concept of electrostatic doping and related devices Solid-State Electronics, vol. 155, pp. 32–43, May 2019. DOI: 10.1016/j.sse.2019.03.017 Link
L. Donetti, C. Sampedro, F. G. Ruiz, A. Godoy, and F. Gamiz A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations Solid-State Electronics, vol. 159, pp. 19–25, Sep. 2019. DOI: 10.1016/j.sse.2019.03.044 Link
M. Duan, C. Navarro, B. Cheng, F. Adamu-Lema, X. Wang, V. P. Georgiev, F. Gamiz, C. Millar, A. Asenov Thorough Understanding of Retention Time of Z2FET Memory Operation IEEE Transactions on Electron Devices, vol. 66, no. 1, pp. 383–388, Jan. 2019. DOI: 10.1109/TED.2018.2877977 Link
Sehyun Kwon, Carlos Navarro, Francisco Gamiz, Sorin Cristoloveanu, Phileppe Galy, Minho Choi, Yong Tae Kim, Jinho Ahn Characteristics of band modulation FET on sub 10 nm SOI Jpn. J. Appl. Phys., vol. 58, no. SB, p. SBBB07, Feb. 2019. DOI: 10.7567/1347-4065/aafc9f Link
K. H. Lee and S. Cristoloveanu Esaki Diode in Undoped Silicon Film IEEE Electron Device Letters, vol. 40, no. 9, pp. 1346–1349, Sep. 2019. DOI: 10.1109/LED.2019.2927676 Link
K. H. Lee, H.-J. Park, M. Bawedin, and S. Cristoloveanu Carrier Lifetime Measurement in Ultrathin FD-SOI Using Virtual Diodes IEEE Transactions on Electron Devices, vol. 66, no. 4, pp. 1874–1880, Apr. 2019. DOI: 10.1109/TED.2019.2897502 Link
C. Marquez, C. Navarro, S. Navarro, J. L. Padilla, L. Donetti, C. Sampedro, P. Galy, Y. Kim, F. Gamiz On the Low-Frequency Noise Characterization of Z2-FET Devices IEEE Access, vol. 7, pp. 42551–42556, 2019. DOI: 10.1109/ACCESS.2019.2907062 Link
C. Medina-Bailon, J. L. Padilla, T. Sadi, C. Sampedro, A. Godoy, L. Donetti, V. P. Georgiev, F. Gamiz, A. Asenov Multisubband Ensemble Monte Carlo Analysis of Tunneling Leakage Mechanisms in Ultrascaled FDSOI, DGSOI, and FinFET Devices IEEE Transactions on Electron Devices, vol. 66, no. 3, pp. 1145–1152, Mar. 2019. DOI: 10.1109/TED.2019.2890985 Link
C. Navarro, S. Navarro, C. Marquez, J. L. Padilla, P. Galy, and F. Gamiz 3-D TCAD Study of the Implications of Channel Width and Interface States on FD-SOI Z2-FETs IEEE Transactions on Electron Devices, vol. 66, no. 6, pp. 2513–2519, Jun. 2019. DOI: 10.1109/TED.2019.2912457 Link
Carlos Navarro, Siegfried Karg, Siegfried Karg, Santiago Navarro, Clarissa Convertino, Cezar Zota, Lukas Czornomaz Francisco Gamiz Capacitor-less dynamic random access memory based on a III–V transistor with a gate length of 14 nm Nat Electron, vol. 2, no. 9, pp. 412–419, Sep. 2019. DOI: 10.1038/s41928-019-0282-6 Link
Carlos Navarro, Carlos Marquez, Santiago Navarro, Carmen Lozano, Sehyun Kwon, Yong-Tae Kim, Francisco Gamiz Simulation Perspectives of Sub-1V Single-Supply Z2-FET 1T-DRAM Cells for Low-Power IEEE Access, vol. 7, pp. 40279–40284, 2019. DOI: 10.1109/ACCESS.2019.2907151 Link
S. Navarro, C. Marquez, K. H. Lee, C. Navarro, M. Parihar, H. Park, P. Galy, M. Bawedin, Y. T. Kim, S. Cristoloveanu, F. Gamiz Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells Solid-State Electronics, vol. 159, pp. 12–18, Sep. 2019. DOI: 10.1016/j.sse.2019.03.040 Link
Santiago Navarro, Carlos Navarro, Carlos Marquez, Norberto Salazar, Philippe Galy, Sorin Cristoloveanu, Francisco Gamiz Reliability Study of Thin-Oxide Zero-Ionization, Zero-Swing FET 1T-DRAM Memory Cell IEEE Electron Device Letters, vol. 40, no. 7, pp. 1084–1087, Jul. 2019. DOI: 10.1109/LED.2019.2915118 Link
F. Tcheme Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, G. Ghibaudo, J. -Ch. Barbe Doping profile extraction in thin SOI films: Application to A2RAM Solid-State Electronics, vol. 159, pp. 3–11, Sep. 2019. DOI: 10.1016/j.sse.2019.03.038 Link

Conference contributions

Conference Authors Title Place & Date
EUROSOI-ULIS 2016 Francisco Gamiz Capacitor-less memory: Advances and challenges Vienna (Austria), January 25–27, 2016
EUROSOI-ULIS 2016 C. Medina-Bailon, C. Sampedro, F. Gamiz, A. Godoy and L. Donetti Confinement orientation effects in S/D tunneling, Vienna (Austria), January 25–27, 2016
ESSDERC 2016 S. Karg, V. Schaller, A. Gaul, K. Moselund, H. Schmid, B. Gotsmann, J. Gooth, H. Riel Ballistic transport and high thermopower in one-dimensional InAs nanowire Lausanne (Switzerland), September 12–15, 2016
SISPAD 2016 C. Medina-Bailon, C. Sampedro, J. L. Padilla, F. Gamiz, A. Godoy, and L. Donetti Multi-subband ensemble Monte Carlo study of band-to-band tunneling in silicon-based TFETs Nuremberg (Germany), September 6-8 2016
IEEE S3S 2016 H. E. Dirani et al. Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory Burlingame, CA  (USA), October 10-13, 2016
EUROSOI-ULIS 2017 M. Bawedin, H. EI Dirani, K. Lee, M.S. Parihar, J. Lacord, S. Martinie, C. Le Royer, J.-Ch. Barbe, X. Mescot, P. Fonteneau, Ph. Galy, F. Gamiz, C. Navarro, B. Cheng,
A. Asenov, Y. Taur, and S. Cristoloveanu
The mystery of the Z²-FET 1 T-DRAM memory Athens (Greece), April 3–5, 2017
EUROSOI-ULIS 2017 C. Medina-Bailon, T. Sadi, C. Sampedro, J.L. Padilla, A. Godoy, L. Donetti, V. Georgiev, F. Gamiz and A. Asenov Assessment of Gate Leakage Mechanism utilizing Multi-Subband Ensemble Monte Carlo Athens (Greece), April 3–5, 2017
EUROSOI-ULIS 2017 M.S. Parihar, K. H. Lee, M. Bawedin, J. Lacord, S. Martinie, J.-C. Barbé, Y. Taur and S. Cristoloveanu Impact of carrier lifetime on Z²-FET operation Athens (Greece), April 3–5, 2017
EUROSOI-ULIS 2017 L. Donetti, C. Sampedro, F.G. Ruiz, A. Godoy, F. Gamiz Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs Athens (Greece), April  3–5, 2017
EUROSOI-ULIS 2017 K. H. Lee, M. Bawedin, H. Park, M. S. Parihar, and S. Cristoloveanu A virtual SOI diode with electrostatic doping Athens (Greece), April  3–5, 2017
EUROSOI-ULIS 2017 H. J. Park, M. Bawedin, K. Sasaki, J.-A. Martino, and S. Cristoloveanu Is there a kink effect in FDSOI MOSFETs? Athens (Greece), April  3–5, 2017
IMW 2017 M.S. Parihar, K. H. Lee, H. E. Dirani, C. Navarro, J. Lacord, S. Martinie, J.-Ch. Barbe, P.
Fonteneau, Ph. Galy, C. Le Royer, X. Mescot, F. Gamiz, B. Cheng, A. Asenov, Y. Taur, M.
Bawedin and S. Cristoloveanu
Low-Power Z²-FET Capacitorless 1T-DRAM Monterey (USA), May 14–17, 2017
INFOS 2017 H. El Dirani, K. Lee, M.S. Parihar, J. Lacord, S. Martinie, J.-Ch. Barbe, X. Mescot, P. Fonteneau, Ph. Galy, F. Gamiz, Y. Taur, S. Cristoloveanu, M. Bawedin Ultra Low-Power 1T-DRAM in FDSOI Technology Potsdam (Germany), June 27–30, 2017
SISPAD 2017 F. Adamu-Lema, M. Duan, C. Navaro, V Georgiev, B. Cheng, X. Wang, C. Millar, F. Gamiz, A.Asenov Simulation Based DC and Dynamic Behaviour Characterization of Z2FET Kamakura (Japan) , September 7–9, 2017
SISPAD 2017 M. Duan, F. Adamu-Lema, B. Cheng, C. Navarro, X. Wang, V. P. Georgiev, F.
Gamiz, C. Millar, A. Asenov
2D-TCAD Simulation on Retention Time of Z2FET for DRAM Application Kamakura (Japan) , September 7–9, 2017
SISPAD 2017 C. Medina-Bailon, C. Sampedro, J.L. Padilla,A. Godoy, L. Donetti, F. Gamiz, T. Sadi, V. Georgiev, A. Asenov Multi-Subband Ensemble Monte Carlo Study of Tunneling Leakage Mechanisms Kamakura (Japan) , September 7–9, 2017
SISPAD 2017 F. Tcheme Wakam, J. Lacord, S. Martinie, J.-Ch. Barbe, M. Bawedin, S. Cristoloveanu Optimization guidelines of A2RAM cell performance through TCAD simulations Kamakura (Japan) , September 7–9, 2017
SISPAD 2017 J. Lacord, S. Martinie, M.-S. Parihar, K. Lee, M. Bawedin, S. Cristoloveanu, Y. Taur and J.-Ch. Barbé Z²-FET DC hysteresis: deep understanding and preliminary model  Kamakura (Japan) , September 7–9, 2017
ESSDERC 2017 K. H. Lee, M. Bawedin, H.-J. Park, M. Parihar, and S. Cristoloveanu Carrier lifetime evaluation in FD-SOI layers,  Leuven (Belgium), September 11–14, 2017
ESSDERC 2017 L. Donetti, C. Sampedro, F.G. Ruiz, A. Godoy, F. Gamiz Three-dimensional Multi-subband Simulation of Scaled FinFETs Leuven (Belgium), September 11–14, 2017
IEEE S3S 2017 C.Navarro, F.Gamiz, N.Rodriguez, L.Donetti, C.Sampedro, Seong Il Kim, Yong Tae Kim, S. Cristoloveanu Gate-induced vs. implanted body doping impact on Z²-FET DC operation San Francisco (USA), October 16–19, 2017
IEEE S3S 2017 S. Martinie, J. Lacord, O. Rozeau, M.-S. Parihar, Kyunghwa Lee, Maryline Bawedin, Sorin Cristoloveanu, Yuan Taur and J-C. Barbe Z²-FET SPICE Model: DC and Memory Operation San Francisco (USA), October 16–19, 2017
MRS Fall Meeting 2017 Siegfried Karg et al. Ballistic One-Dimensional Transport in InAs Nano-Structure Boston (USA), November 26–December 1, 2017
EUROSOI-ULIS 2018 M. Duan, F. Adamu-Lema, C. Navarro, F. Gamiz, and A. Asenov Simulation study on Z2FET scalability, process optimization and their impact on performance Granada (Spain), March 19–21, 2018
EUROSOI-ULIS 2018 L. Donetti, C. Sampedro, F. G. Ruiz, A. Godoy, and F. Gamiz 3D multi-subband ensemble Monte Carlo simulation of <100> and <110> Si nanowire FETs Granada (Spain), March 19–21, 2018
EUROSOI-ULIS 2018 C. Medina-Bailon et al. MS-EMC vs. NEGF: A comparative study accounting for transport quantum corrections Granada (Spain), March 19–21, 2018
EUROSOI-ULIS 2018 S. Navarro et al. Evaluation of thin-oxide Z2-FET DRAM cell Granada (Spain), March 19–21, 2018
EUROSOI-ULIS 2018  M. S. Parihar et al. Z2-FET memory matrix in 28 nm FDSOI technology Granada (Spain), March 19–21, 2018
EUROSOI-ULIS 2018 F. T. Wakam et al. Doping profile extraction in thin SOI films: Application to A2RAM Granada (Spain), March 19–21, 2018
SISPAD 2018 F. Adamu-Lema, M. Duan, V. Georgiev, and Prf. A. Asenov A Carrier Lifetime Sensitivity Probe Based on Transient Capacitance: A novel method to Characterize Lifetime in Z2FET Austin (USA), September 24–26, 2018
SISPAD 2018 M. Duan et al. Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor to Circuit Austin (USA), September 24–26, 2018
SISPAD 2018 M. Duan et al. Modelling on Aging Induced Time Dependent Variability of Z2FET for Memory Applications Austin (USA), September 24–26, 2018
SISPAD 2018 J. Lacord et al. MSDRAM, A2RAM and Z2-FET performance benchmark for 1T-DRAM applications Austin (USA), September 24–26, 2018
SISPAD 2018 F. T. Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, and J.-C. Barbé Evidence of fast and low-voltage A2RAM ‘1’ state programming Austin (USA), September 24–26, 2018
SISPAD 2018 C. Medina-Bailon et al. Impact of Strain on S/D tunneling in FinFETs: a MS-EMC study Austin (USA), September 24–26, 2018
IEEE S3S 2018 H. Park, K. Lee, J.-P. Colinge, and S. Cristoloveanu Is FD-SOI immune to Floating Body Effects? Burlingame (USA), October 15–18, 2018
EUROSOI-ULIS 2019 Sehyun Kwon et al. Reliable operation of Z2-FET memory matrix without selector Grenoble (France), April 1–3, 2019
EUROSOI-ULIS 2019 Carlos Navarro, Santiago Navarro, Carlos Marquez, and Francisco Gamiz TCAD Analysis of III-V capacitor-less A2RAM cells Grenoble (France), April 1–3, 2019
EUROSOI-ULIS 2019 Clarissa Convertino et al. Replacement Metal Gate InGaAs-OI FinFETs by Selective
Epitaxy in Oxide Cavities
Grenoble (France), April 1–3, 2019
EUROSOI-ULIS 2019 F. Tcheme Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, and T.
Poiroux
Modeling of the bridge threshold voltage in A2RAM cell Grenoble (France), April 1–3, 2019
EUROSOI-ULIS 2019 Kyung Hwa Lee, Maryline Bawedin, and Sorin Cristoloveanu Reverse recovery current in virtual diodes Grenoble (France), April 1–3, 2019
EUROSOI-ULIS 2019 F. T. Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, and T. Poiroux Pure boron monolayer to boost A2RAM performance Grenoble (France), April 1–3, 2019
IWJT 2019 F. Gamiz et al. Capacitorless memory devices using virtual junctions Kyoto (Japan), June 6–7, 2019
ESSDERC 2019 Carlos Marquez, Santiago Navarro, Norberto Salazar, Philippe Galy, Sorin
Cristoloveanu, and Francisco Gamiz
Temperature and Gate Leakage Influence on
the Z2-FET Memory Operation
Krakow (Poland), September 23–26, 2019