Work Package 1
Work Package 2
Work Package 3
- D3.1 – Definition of the electrical parameters required by the simulation and modelling.
- D3.2 – Development of new characterization techniques for the extraction of “transient” parameters and memory performance.
- D3.3 – Implementation of the novel FB- DRAM generic structures in 2D TCAD simulators.
- D3.4 – Simulation of FB-DRAM variability using DOE and surface response techniques.
- D3.5 – Development of accurate models to describe band structure related effects in III-V nanowires.
- D3.6 – Development of the simulation methodology for conducting detailed transient analysis and systematic results.
- D3.7 – FB-DRAM optimization for the second fabrication run.