The Reminder (Revolutionary Embedded Memory for INternet of things Devices and Energy Reduction) project aims to develop an embedded DRAM solution optimized for ultra-low-power consumption and variability, especifically focused on Internet of Things cut-edge devices.
REMINDER aims to develop an embedded DRAM solution optimized for ultra-lowpower consumption and variability immunity, specically focused on Internet of Things cut-edge devices. REMINDER is based on three pillars.
The eventual replacement of Si by strained Si/SiGe and III-V materials in future CMOS circuits would also require the redesign of different applications, including memory cells, and therefore we also propose the evaluation of the optimized bit cells developed in pillar i) in FD28 and FD14 technology nodes using these alternative materials. In order to achieve these goals, we adopt a multiscale approach that enables us to determine the band structures and the memory mechanisms (Band-to-Band Tunnelling, carrier transport and generation-recombination) in semiconductor NWs with different materials and geometries (Si, sSi, Si/Si-Ge core-shell, and III-V).We will employ numerical tools at different levels from atomic-detail (DFT) to the eective mass approximation.